Browse papers
A

Section A: Long Answer Questions

Attempt all questions.

5 questions
1long10 marks

(a) Explain the formation of the depletion region in an unbiased p-n junction and describe how it changes under forward and reverse bias. (4 marks)

(b) A full-wave bridge rectifier is fed from a transformer whose secondary delivers 18 Vrms18\ \text{V}_{rms} at 50 Hz50\ \text{Hz}. A capacitor filter of 470 μF470\ \mu\text{F} is connected across a load of 1.2 kΩ1.2\ \text{k}\Omega. Taking each diode drop as 0.7 V0.7\ \text{V}, determine: (i) the peak load voltage, (ii) the DC load current, (iii) the peak-to-peak ripple voltage, and (iv) the ripple factor. (6 marks)

(a) Depletion region

When a p-type and an n-type semiconductor are joined, the high concentration of free electrons on the n-side and holes on the p-side causes diffusion across the junction. Electrons diffuse into the p-side and recombine with holes; holes diffuse into the n-side and recombine with electrons. This leaves behind immobile ionized dopant atoms — negative acceptor ions on the p-side and positive donor ions on the n-side.

This region, now devoid of free carriers, is the depletion region. The exposed ions set up an internal electric field (a barrier potential, about 0.7 V0.7\ \text{V} for Si) that opposes further diffusion, establishing equilibrium.

  • Forward bias (p to +, n to −): the external field opposes the barrier field, the depletion region narrows, the barrier potential is reduced, and majority carriers cross easily → large current.
  • Reverse bias (p to −, n to +): the external field aids the barrier field, the depletion region widens, the barrier increases, and only a tiny reverse saturation current (minority carriers) flows.

(b) Full-wave bridge rectifier with capacitor filter

Given: Vrms=18 VV_{rms}=18\ \text{V}, f=50 Hzf=50\ \text{Hz}, C=470 μFC=470\ \mu\text{F}, RL=1.2 kΩR_L=1.2\ \text{k}\Omega, two diodes conduct per half-cycle (2×0.7=1.4 V2\times0.7=1.4\ \text{V} drop).

(i) Peak load voltage

Vm=2Vrms=1.4142×18=25.46 VV_m = \sqrt{2}\,V_{rms} = 1.4142 \times 18 = 25.46\ \text{V} Vpeak,load=Vm2VD=25.461.4=24.06 VV_{peak,load} = V_m - 2V_D = 25.46 - 1.4 = \mathbf{24.06\ V}

(ii) DC load current (using the peak as the approximate average for a lightly-rippled filter)

IDC=Vpeak,loadRL=24.061200=0.02005 A=20.05 mAI_{DC} = \frac{V_{peak,load}}{R_L} = \frac{24.06}{1200} = 0.02005\ \text{A} = \mathbf{20.05\ mA}

(iii) Peak-to-peak ripple voltage (full-wave: ripple frequency =2f=100 Hz=2f=100\ \text{Hz})

Vr(pp)=IDC2fC=0.020052×50×470×106=0.020050.047=0.4266 VV_{r(pp)} = \frac{I_{DC}}{2 f C} = \frac{0.02005}{2 \times 50 \times 470\times10^{-6}} = \frac{0.02005}{0.047} = \mathbf{0.4266\ V}

(iv) Ripple factor

Vr(rms)=Vr(pp)23=0.42663.4641=0.1232 VV_{r(rms)} = \frac{V_{r(pp)}}{2\sqrt{3}} = \frac{0.4266}{3.4641} = 0.1232\ \text{V} r=Vr(rms)VDC=0.123224.06=0.00512=0.51%r = \frac{V_{r(rms)}}{V_{DC}} = \frac{0.1232}{24.06} = 0.00512 = \mathbf{0.51\%}

The small ripple factor confirms effective smoothing by the 470 μF470\ \mu\text{F} capacitor.

semiconductor-diodesrectifierszener-regulator
2long10 marks

A silicon npn transistor is used in a voltage-divider bias circuit with VCC=15 VV_{CC}=15\ \text{V}, R1=47 kΩR_1=47\ \text{k}\Omega, R2=10 kΩR_2=10\ \text{k}\Omega, RC=2.2 kΩR_C=2.2\ \text{k}\Omega, RE=1 kΩR_E=1\ \text{k}\Omega, and β=120\beta=120. Take VBE=0.7 VV_{BE}=0.7\ \text{V}.

(a) Determine the operating point (ICI_C, VCEV_{CE}) using the exact (Thevenin) analysis. (6 marks)

(b) Draw the DC load line, mark the Q-point, and comment on whether the transistor is suitably biased for amplifier operation. (4 marks)

(a) Thevenin (exact) analysis

Thevenin voltage at the base:

VTH=VCCR2R1+R2=15×1047+10=15×1057=2.632 VV_{TH} = V_{CC}\frac{R_2}{R_1+R_2} = 15 \times \frac{10}{47+10} = 15 \times \frac{10}{57} = 2.632\ \text{V}

Thevenin resistance:

RTH=R1R2=47×1047+10=47057=8.246 kΩR_{TH} = R_1\,\|\,R_2 = \frac{47\times10}{47+10} = \frac{470}{57} = 8.246\ \text{k}\Omega

Base loop (KVL): VTH=IBRTH+VBE+IEREV_{TH} = I_B R_{TH} + V_{BE} + I_E R_E, with IE=(β+1)IBI_E=(\beta+1)I_B.

IB=VTHVBERTH+(β+1)RE=2.6320.78.246k+(121)(1k)I_B = \frac{V_{TH}-V_{BE}}{R_{TH}+(\beta+1)R_E} = \frac{2.632-0.7}{8.246\text{k}+(121)(1\text{k})} IB=1.9328.246+121 (kΩ)=1.932129.246 kΩ=14.95 μAI_B = \frac{1.932}{8.246+121\ (\text{k}\Omega)} = \frac{1.932}{129.246\ \text{k}\Omega} = 14.95\ \mu\text{A}

Collector current:

IC=βIB=120×14.95 μA=1.794 mAI_C = \beta I_B = 120 \times 14.95\ \mu\text{A} = \mathbf{1.794\ mA}

Emitter current: IE=IC+IB=1.794+0.0149=1.809 mAI_E = I_C + I_B = 1.794 + 0.0149 = 1.809\ \text{mA}

Collector-emitter voltage:

VCE=VCCICRCIERE=15(1.794m)(2.2k)(1.809m)(1k)V_{CE} = V_{CC} - I_C R_C - I_E R_E = 15 - (1.794\text{m})(2.2\text{k}) - (1.809\text{m})(1\text{k}) VCE=153.9471.809=9.24 VV_{CE} = 15 - 3.947 - 1.809 = \mathbf{9.24\ V}

Q-point: IC1.79 mAI_C \approx 1.79\ \text{mA}, VCE9.24 VV_{CE} \approx 9.24\ \text{V}.

(b) DC load line and Q-point

DC load-line equation: VCE=VCCIC(RC+RE)V_{CE}=V_{CC}-I_C(R_C+R_E).

  • Saturation (x-axis cut, VCE=0V_{CE}=0): IC(sat)=VCCRC+RE=153.2k=4.69 mAI_{C(sat)}=\dfrac{V_{CC}}{R_C+R_E}=\dfrac{15}{3.2\text{k}}=4.69\ \text{mA}
  • Cut-off (y-axis cut, IC=0I_C=0): VCE=VCC=15 VV_{CE}=V_{CC}=15\ \text{V}
 I_C (mA)
 4.69 |*
      | \
 1.79 |---* Q (9.24 V, 1.79 mA)
      |    \
    0 +-----*----- V_CE (V)
      0    9.24  15

Comment: VCE=9.24 VV_{CE}=9.24\ \text{V} is close to mid-supply (VCC/2=7.5 VV_{CC}/2=7.5\ \text{V}) and ICI_C sits roughly mid-way along the load line. The Q-point lies in the active region, well away from saturation and cut-off, giving good symmetrical voltage swing — the transistor is suitably biased for linear amplifier operation. The emitter resistor RER_E provides stable bias (DC negative feedback) against β\beta and temperature variation.

bjtdc-biasingload-line
3long10 marks

(a) State four ideal op-amp properties and explain the concept of the virtual short in a negative-feedback op-amp configuration. (4 marks)

(b) For the inverting summing amplifier shown, V1=+0.4 VV_1=+0.4\ \text{V} through R1=10 kΩR_1=10\ \text{k}\Omega, V2=0.6 VV_2=-0.6\ \text{V} through R2=20 kΩR_2=20\ \text{k}\Omega, V3=+1.0 VV_3=+1.0\ \text{V} through R3=40 kΩR_3=40\ \text{k}\Omega, and the feedback resistor is Rf=80 kΩR_f=80\ \text{k}\Omega. Find the output voltage VoV_o. (4 marks)

(c) If the same op-amp has an open-loop gain of 2×1052\times10^5 and is configured as a non-inverting amplifier of closed-loop gain 26 dB26\ \text{dB}, find the resistor ratio Rf/R1R_f/R_1. (2 marks)

(a) Ideal op-amp properties

  1. Infinite open-loop voltage gain (AOLA_{OL}\to\infty).
  2. Infinite input impedance (ZinZ_{in}\to\infty, so input currents are zero).
  3. Zero output impedance (Zout0Z_{out}\to 0).
  4. Infinite bandwidth and infinite CMRR; zero input offset.

Virtual short: With negative feedback and very large AOLA_{OL}, the differential input voltage Vd=Vo/AOL0V_d=V_o/A_{OL}\to 0. Hence V+VV_+ \approx V_-: the two input terminals are at (almost) the same potential — a virtual short. When the non-inverting input is grounded, the inverting input becomes a virtual ground (0 V0\ \text{V}) without actually drawing current.

(b) Inverting summing amplifier

Vo=Rf(V1R1+V2R2+V3R3)V_o = -R_f\left(\frac{V_1}{R_1}+\frac{V_2}{R_2}+\frac{V_3}{R_3}\right) Vo=80k(0.410k+0.620k+1.040k)V_o = -80\text{k}\left(\frac{0.4}{10\text{k}}+\frac{-0.6}{20\text{k}}+\frac{1.0}{40\text{k}}\right)

Compute each term:

  • 0.410k=40 μA\dfrac{0.4}{10\text{k}}=40\ \mu\text{A}
  • 0.620k=30 μA\dfrac{-0.6}{20\text{k}}=-30\ \mu\text{A}
  • 1.040k=25 μA\dfrac{1.0}{40\text{k}}=25\ \mu\text{A}

Sum =4030+25=35 μA=40-30+25=35\ \mu\text{A}.

Vo=80×103×35×106=2.8 VV_o = -80\times10^3 \times 35\times10^{-6} = -2.8\ \text{V} Vo=2.8 V\boxed{V_o = \mathbf{-2.8\ V}}

(c) Non-inverting gain from dB

ACL(dB)=26ACL=1026/20=101.3=19.9520A_{CL}(\text{dB})=26 \Rightarrow A_{CL}=10^{26/20}=10^{1.3}=19.95 \approx 20

For a non-inverting amplifier ACL=1+RfR1A_{CL}=1+\dfrac{R_f}{R_1}, so

RfR1=ACL1=201=19\frac{R_f}{R_1}=A_{CL}-1 = 20-1 = \mathbf{19}

(The open-loop gain of 2×105ACL2\times10^5 \gg A_{CL}, so the ideal closed-loop expression is valid.)

operational-amplifiernon-inverting-amplifiersumming-amplifier
4long10 marks

(a) Simplify the Boolean function F(A,B,C,D)=m(0,1,2,5,8,9,10)F(A,B,C,D)=\sum m(0,1,2,5,8,9,10) using a four-variable Karnaugh map. Write the minimal sum-of-products (SOP) expression. (6 marks)

(b) Implement the simplified expression using only NAND gates and state how many 2-input NAND gates are required. (4 marks)

(a) Karnaugh map simplification

Minterms present (=1): 0,1,2,5,8,9,10. K-map (rows = ABAB, columns = CDCD in Gray order 00,01,11,1000,01,11,10):

           CD=00  CD=01  CD=11  CD=10
AB=00       1(0)   1(1)   0(3)   1(2)
AB=01       0(4)   1(5)   0(7)   0(6)
AB=11       0(12)  0(13)  0(15)  0(14)
AB=10       1(8)   1(9)   0(11)  1(10)

Grouping:

  1. Quad — minterms 0,1,8,9 (corners columns CD=00,01CD=00,01 with AB=00,10AB=00,10): here B=0B=0 and C=0C=0. Term = BˉCˉ\bar{B}\,\bar{C}.
  2. Quad — minterms 0,2,8,10 (four corners, CD=00,10CD=00,10 with AB=00,10AB=00,10): here B=0B=0 and D=0D=0. Term = BˉDˉ\bar{B}\,\bar{D}.
  3. Pair — minterms 1,5 (A=0,C=0,D=1A=0,C=0,D=1): term = AˉCˉD\bar{A}\,\bar{C}\,D.

All 1-cells are covered (0,1,2,8,9,10 by the two quads; 5 by the pair, which also re-covers 1).

F=BˉCˉ+BˉDˉ+AˉCˉD\boxed{F = \bar{B}\,\bar{C} + \bar{B}\,\bar{D} + \bar{A}\,\bar{C}\,D}

(b) NAND-only implementation

A two-level SOP maps directly to NAND-NAND. Using De Morgan, F=(BˉCˉ)(BˉDˉ)(AˉCˉD)F=\overline{\overline{(\bar B\bar C)}\cdot\overline{(\bar B\bar D)}\cdot\overline{(\bar A\bar C D)}}.

Gate count (allowing inverters from NANDs, with 2-input NANDs):

  • Inverters for Aˉ,Bˉ,Cˉ,Dˉ\bar A,\bar B,\bar C,\bar D: 4 NANDs (each input tied together).
  • Term BˉCˉ\bar B\bar C : 1 NAND.
  • Term BˉDˉ\bar B\bar D : 1 NAND.
  • Term AˉCˉD\bar A\bar C D (3 literals): needs a 3-input AND ≈ NAND→ with 2-input gates: (AˉCˉ\bar A\cdot\bar C) via 1 NAND giving AˉCˉ\overline{\bar A\bar C}, then combine with DD. To keep the NAND-NAND structure each product term feeds a NAND producing its complement. For the 3-literal term we form AˉCˉ\bar A\bar C (1 NAND + 1 inverter = 2 gates) then NAND that with DD → 1 gate.
  • Final OR is realized as one NAND of the three term-complements: 1 NAND (3-input, or built from 2 two-input NANDs).

Practical 2-input NAND count: 4 (inverters) + 1 (BˉCˉ\bar B\bar C) + 1 (BˉDˉ\bar B\bar D) + 2 (3-literal term) + 1 (re-invert that term) + 2 (final 3-input OR-as-NAND from two 2-input NANDs) ≈ 11 two-input NAND gates.

If 3-input NANDs are permitted the design collapses to a clean two-level NAND-NAND network using 3 first-level NANDs + 1 output NAND + 4 inverters = 8 gates.

Diagram (logic):

A,B,C,D -> [inverters] -> Bbar,Cbar,Dbar,Abar
  Bbar,Cbar -> NAND -> g1
  Bbar,Dbar -> NAND -> g2
  Abar,Cbar,D -> NAND -> g3
  g1,g2,g3 -> NAND -> F
digital-logicboolean-algebrak-map
5long10 marks

(a) Define gain in decibels and explain the significance of the half-power (−3 dB) frequencies and bandwidth of an amplifier. (3 marks)

(b) An RC-coupled amplifier has a mid-band voltage gain of 250250. Its lower cut-off frequency is 40 Hz40\ \text{Hz} and upper cut-off frequency is 36 kHz36\ \text{kHz}. Determine: (i) the mid-band gain in dB, (ii) the bandwidth, (iii) the gain (as a ratio) at the cut-off frequencies, and (iv) the gain-bandwidth product. (5 marks)

(c) Why does an RC-coupled amplifier's gain fall at low and at high frequencies? (2 marks)

(a) Decibel gain, half-power frequencies, bandwidth

Voltage gain in dB: Av(dB)=20log10(Vo/Vi)A_v(\text{dB})=20\log_{10}(V_o/V_i); power gain in dB: Ap(dB)=10log10(Po/Pi)A_p(\text{dB})=10\log_{10}(P_o/P_i).

The half-power frequencies fLf_L (lower) and fHf_H (upper) are the frequencies at which output power falls to half its mid-band value, i.e. voltage gain falls to 1/2=0.7071/\sqrt2=0.707 of mid-band — equivalently a drop of 3 dB-3\ \text{dB}. The bandwidth is BW=fHfLBW=f_H-f_L, the band of frequencies over which the amplifier responds usefully (gain within 3 dB of mid-band).

(b) Numerical

Given Amid=250A_{mid}=250, fL=40 Hzf_L=40\ \text{Hz}, fH=36 kHzf_H=36\ \text{kHz}.

(i) Mid-band gain in dB:

A(dB)=20log10(250)=20×2.3979=47.96 dBA(\text{dB})=20\log_{10}(250)=20\times2.3979 = \mathbf{47.96\ dB}

(ii) Bandwidth:

BW=fHfL=3600040=35960 Hz  (35.96 kHz)BW=f_H-f_L = 36000-40 = \mathbf{35960\ Hz}\;(\approx 35.96\ \text{kHz})

(iii) Gain at cut-off:

Acutoff=0.707×Amid=0.707×250=176.8A_{cutoff}=0.707\times A_{mid}=0.707\times250 = \mathbf{176.8}

(equivalently 47.963=44.96 dB47.96-3 = 44.96\ \text{dB}).

(iv) Gain-bandwidth product:

GBW=Amid×BW=250×35960=8.99×106 Hz=8.99 MHzGBW = A_{mid}\times BW = 250 \times 35960 = 8.99\times10^{6}\ \text{Hz} = \mathbf{8.99\ MHz}

(c) Reasons for gain fall-off

  • Low frequencies: the coupling and bypass capacitors have high reactance (XC=1/2πfCX_C=1/2\pi fC). They no longer act as short circuits, so signal is dropped across them (and the emitter bypass becomes ineffective, reducing gain). This causes the low-frequency roll-off.
  • High frequencies: the shunt (parasitic/junction) capacitances — transistor inter-electrode capacitances (Cbe,CbcC_{be},C_{bc}, Miller effect) and wiring/load capacitance — have low reactance and shunt the signal to ground, reducing gain. This causes the high-frequency roll-off.
amplifiersfrequency-responsedecibels
B

Section B: Short Answer Questions

Attempt all questions.

6 questions
6short5 marks

A 6.2 V6.2\ \text{V} zener diode regulates a load. The unregulated input is 12 V12\ \text{V} through a series resistor Rs=220 ΩR_s=220\ \Omega. The load resistance is 1 kΩ1\ \text{k}\Omega. Assuming the zener is in breakdown, find (i) the load current, (ii) the series resistor current, and (iii) the zener current. Verify the zener stays in regulation if its minimum holding current is 5 mA5\ \text{mA}.

Given VZ=6.2 VV_Z=6.2\ \text{V}, Vin=12 VV_{in}=12\ \text{V}, Rs=220 ΩR_s=220\ \Omega, RL=1 kΩR_L=1\ \text{k}\Omega.

(i) Load current (load sees the regulated VZV_Z):

IL=VZRL=6.21000=6.2 mA=6.2 mAI_L = \frac{V_Z}{R_L} = \frac{6.2}{1000} = 6.2\ \text{mA} = \mathbf{6.2\ mA}

(ii) Series resistor current:

Is=VinVZRs=126.2220=5.8220=0.02636 A=26.36 mAI_s = \frac{V_{in}-V_Z}{R_s} = \frac{12-6.2}{220} = \frac{5.8}{220} = 0.02636\ \text{A} = \mathbf{26.36\ mA}

(iii) Zener current (KCL: Is=IZ+ILI_s=I_Z+I_L):

IZ=IsIL=26.366.2=20.16 mAI_Z = I_s - I_L = 26.36 - 6.2 = \mathbf{20.16\ mA}

Verification: IZ=20.16 mA>IZ(min)=5 mAI_Z = 20.16\ \text{mA} > I_{Z(min)}=5\ \text{mA}, so the diode remains in breakdown and regulation is maintained.

zener-diodevoltage-regulator
7short5 marks

For a common-emitter amplifier, the DC emitter current is 1.5 mA1.5\ \text{mA} at room temperature (VT=26 mVV_T=26\ \text{mV}), the collector resistor is RC=3.3 kΩR_C=3.3\ \text{k}\Omega, the AC load is RL=4.7 kΩR_L=4.7\ \text{k}\Omega (capacitively coupled), and the emitter is fully bypassed. Using the rer_e model, find (i) rer_e, (ii) the AC voltage gain magnitude, and (iii) express the gain in dB.

(i) AC emitter resistance:

re=VTIE=26 mV1.5 mA=17.33 Ω=17.33 Ωr_e = \frac{V_T}{I_E} = \frac{26\ \text{mV}}{1.5\ \text{mA}} = 17.33\ \Omega = \mathbf{17.33\ \Omega}

(ii) Voltage gain (fully bypassed CE: Av=RCRLreA_v = -\dfrac{R_C\|R_L}{r_e}):

AC collector load:

RCRL=3.3×4.73.3+4.7 kΩ=15.518 kΩ=1.939 kΩR_C\|R_L = \frac{3.3\times4.7}{3.3+4.7}\ \text{k}\Omega = \frac{15.51}{8}\ \text{k}\Omega = 1.939\ \text{k}\Omega Av=193917.33=111.9|A_v| = \frac{1939}{17.33} = \mathbf{111.9}

(The negative sign indicates 180180^\circ phase inversion.)

(iii) Gain in dB:

Av(dB)=20log10(111.9)=20×2.0488=40.98 dBA_v(\text{dB}) = 20\log_{10}(111.9) = 20\times2.0488 = \mathbf{40.98\ dB}
bjtcommon-emitterac-analysis
8short5 marks

(a) Draw and explain the op-amp integrator, giving its output expression. (2 marks)

(b) An op-amp integrator has R=100 kΩR=100\ \text{k}\Omega and C=0.1 μFC=0.1\ \mu\text{F}. A constant DC input of +0.5 V+0.5\ \text{V} is applied at t=0t=0 with the capacitor initially uncharged. Find the output voltage after 20 ms20\ \text{ms} and state the time at which the output reaches 12 V-12\ \text{V} (saturation). (3 marks)

(a) Op-amp integrator

        R          C
Vin o--/\/\--+--||--+
            |       |
            |   |\  |
     (virtual    | \-+---o Vout
      ground) +--|+/
            |   |/
           GND

The input resistor RR feeds the inverting node (a virtual ground); the capacitor CC provides feedback. Since the input current Vin/RV_{in}/R flows entirely into CC:

Vo(t)=1RC0tVindt+Vo(0)V_o(t) = -\frac{1}{RC}\int_0^t V_{in}\,dt + V_o(0)

A constant input gives a linearly ramping output — the circuit performs integration.

(b) Numerical

Time constant: RC=(100×103)(0.1×106)=0.01 s=10 msRC = (100\times10^3)(0.1\times10^{-6}) = 0.01\ \text{s} = 10\ \text{ms}.

For a constant input Vin=0.5 VV_{in}=0.5\ \text{V}, Vo(0)=0V_o(0)=0:

Vo(t)=VinRCt=0.50.01t=50t (V, with t in s)V_o(t) = -\frac{V_{in}}{RC}\,t = -\frac{0.5}{0.01}\,t = -50\,t \ \text{(V, with } t \text{ in s)}

Output after 20 ms20\ \text{ms}:

Vo=50×0.020=1.0 VV_o = -50 \times 0.020 = \mathbf{-1.0\ V}

Time to reach 12 V-12\ \text{V}:

12=50t    t=1250=0.24 s=240 ms-12 = -50\,t \;\Rightarrow\; t = \frac{12}{50} = 0.24\ \text{s} = \mathbf{240\ ms}

The output ramps negatively at 50 V/s50\ \text{V/s} and saturates at 12 V-12\ \text{V} after 240 ms240\ \text{ms}.

operational-amplifierintegratordifferentiator
9short5 marks

(a) Convert the decimal number (214)10(214)_{10} to binary, octal and hexadecimal. (3 marks)

(b) Perform the binary subtraction (110101)2(10011)2(110101)_2 - (10011)_2 using 2's-complement arithmetic and verify the result in decimal. (2 marks)

(a) Conversions of (214)10(214)_{10}

Binary (repeated division by 2): 214÷2=107 r0214\div2=107\ r0; 107÷2=53 r1107\div2=53\ r1; 53÷2=26 r153\div2=26\ r1; 26÷2=13 r026\div2=13\ r0; 13÷2=6 r113\div2=6\ r1; 6÷2=3 r06\div2=3\ r0; 3÷2=1 r13\div2=1\ r1; 1÷2=0 r11\div2=0\ r1. Reading remainders bottom-up: (11010110)2\mathbf{(11010110)_2}.

Check: 128+64+16+4+2=214128+64+16+4+2 = 214. ✓

Octal (group binary in 3s from right: 1101011001101011011\,010\,110 \to 011\,010\,110): 011=3, 010=2, 110=6(326)8011=3,\ 010=2,\ 110=6 \Rightarrow \mathbf{(326)_8}. Check: 3×64+2×8+6=192+16+6=2143\times64+2\times8+6 = 192+16+6=214. ✓

Hexadecimal (group in 4s: 110101101101\,0110): 1101=D, 0110=6(D6)161101=D,\ 0110=6 \Rightarrow \mathbf{(D6)_{16}}. Check: 13×16+6=208+6=21413\times16+6 = 208+6=214. ✓

(b) 2's-complement subtraction (110101)2(10011)2(110101)_2-(10011)_2

Decimal: 1101012=53110101_2 = 53, 100112=1910011_2 = 19; expected 5319=3453-19=34.

Use 6 bits. Minuend =110101=110101. Subtrahend =010011=010011 (padded). 2's complement of 010011010011: invert =101100=101100, add 1 =101101=101101.

Add:

  110101
+ 101101
---------
 1100010

Discard the carry-out (7th bit) → result =1000102=100010_2.

1000102=32+2=3410100010_2 = 32+2 = \mathbf{34_{10}}. ✓ Matches 5319=3453-19=34.

number-systemsdigital-logiccode-conversion
10short5 marks

(a) Define a transducer and distinguish between active and passive transducers with one example of each. (2 marks)

(b) A strain gauge of nominal resistance 120 Ω120\ \Omega and gauge factor 2.02.0 forms one arm of a balanced Wheatstone bridge excited by 5 V5\ \text{V}. When subjected to a strain of 1500 με1500\ \mu\varepsilon, find (i) the change in gauge resistance and (ii) the approximate bridge output voltage (quarter-bridge). (3 marks)

(a) Transducer

A transducer is a device that converts one form of energy/physical quantity into another, usually into an electrical signal proportional to the measured quantity.

  • Active (self-generating): produces its own output (no external supply needed). Example: a thermocouple (generates emf from temperature), or a piezoelectric crystal.
  • Passive (externally powered): requires an external excitation; the measurand modulates a circuit parameter (R, L, C). Example: a strain gauge (resistance changes with strain), or an RTD/LVDT.

(b) Strain-gauge Wheatstone bridge

Given R=120 ΩR=120\ \Omega, gauge factor GF=2.0GF=2.0, Vex=5 VV_{ex}=5\ \text{V}, strain ε=1500 με=1500×106=1.5×103\varepsilon=1500\ \mu\varepsilon = 1500\times10^{-6}=1.5\times10^{-3}.

(i) Change in resistance:

ΔRR=GF×ε=2.0×1.5×103=3×103\frac{\Delta R}{R}=GF\times\varepsilon = 2.0 \times 1.5\times10^{-3} = 3\times10^{-3} ΔR=120×3×103=0.36 Ω\Delta R = 120 \times 3\times10^{-3} = \mathbf{0.36\ \Omega}

(ii) Quarter-bridge output (one active arm):

VoVex4ΔRR=54×3×103=1.25×3×103V_o \approx \frac{V_{ex}}{4}\cdot\frac{\Delta R}{R} = \frac{5}{4}\times 3\times10^{-3} = 1.25 \times 3\times10^{-3} Vo=3.75×103 V=3.75 mVV_o = 3.75\times10^{-3}\ \text{V} = \mathbf{3.75\ mV}
instrumentationtransducerswheatstone-bridge
11short5 marks

(a) Differentiate between combinational and sequential logic circuits. (2 marks)

(b) Explain the operation of a JK flip-flop and complete its truth table (including the toggle condition). Briefly state how it overcomes the limitation of the SR flip-flop. (3 marks)

(a) Combinational vs sequential logic

FeatureCombinationalSequential
Output depends onPresent inputs onlyPresent inputs and past state
Memory elementNoneHas memory (flip-flops/latches)
ClockNot requiredUsually clocked
ExamplesAdder, MUX, decoderCounter, register, FSM

(b) JK flip-flop

The JK flip-flop is a refinement of the SR flip-flop in which the forbidden S=R=1S=R=1 condition is redefined as a useful toggle. Internal feedback of the outputs Q,QˉQ,\bar Q back to the input gates ensures that when J=K=1J=K=1 the output simply complements on each clock edge.

Truth table (clocked, edge \downarrow/\uparrow):

JKQn+1Q_{n+1}Operation
00QnQ_nNo change (hold)
010Reset
101Set
11Qnˉ\bar{Q_n}Toggle

Overcoming the SR limitation: In an SR flip-flop the input combination S=R=1S=R=1 is invalid (indeterminate output). The JK flip-flop uses output feedback so that J=K=1J=K=1 produces a defined, predictable toggle (Qn+1=QˉnQ_{n+1}=\bar Q_n) instead of an illegal state — giving the device a complete, unambiguous truth table.

digital-logicflip-flopssequential-circuits

Frequently asked questions

Where can I find the BE Civil Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) question paper 2078?
The full BE Civil Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) 2078 (regular) question paper is available free on Kekkei. You can read every question online and attempt the paper under timed exam conditions.
Does the Basic Electronics Engineering (IOE, EX 451) 2078 paper come with solutions?
Yes. Every question on this Basic Electronics Engineering (IOE, EX 451) past paper includes a step-by-step solution, plus instant AI feedback when you attempt it on Kekkei.
How many marks is the BE Civil Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) 2078 paper?
The BE Civil Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) 2078 paper carries 80 full marks and is meant to be completed in 180 minutes, across 11 questions.
Is practising this Basic Electronics Engineering (IOE, EX 451) past paper free?
Yes — reading and attempting this Basic Electronics Engineering (IOE, EX 451) past paper on Kekkei is completely free.