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A

Section A: Long Answer Questions

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5 questions
1long10 marks

A full-wave centre-tapped rectifier is fed from a transformer whose each half of the secondary delivers an RMS voltage of 18V18\,\text{V} at 50Hz50\,\text{Hz}. The silicon diodes have a forward drop of 0.7V0.7\,\text{V} and the load resistance is RL=220ΩR_L = 220\,\Omega.

(a) Sketch the circuit and explain its operation over one input cycle.

(b) Calculate the peak load current ImI_m, the DC (average) load current IdcI_{dc}, and the DC load voltage VdcV_{dc}.

(c) Determine the RMS load current, the ripple factor, the rectifier efficiency, and the Peak Inverse Voltage (PIV) across each diode.

(a) Circuit and operation

          D1
  o------|>|------+
  |              |
[sec1]           |
  |              +---[R_L]---+
CT o-------------+           |
  |              |           |
[sec2]           |           |
  |              |           |
  o------|>|-----+-----------+
          D2

The centre tap (CT) is the load return. On the positive half-cycle the upper winding forward-biases D1 (D2 reverse-biased); on the negative half-cycle the lower winding forward-biases D2 (D1 reverse-biased). In both half-cycles current flows through RLR_L in the same direction, giving full-wave rectification with output frequency 2×50=100Hz2\times 50 = 100\,\text{Hz}.

(b) Peak, DC current and DC voltage

Peak secondary voltage of each half:

Vm=2×18=25.46VV_m = \sqrt{2}\times 18 = 25.46\,\text{V}

Only one diode conducts at a time, so subtract one diode drop:

Im=VmVDRL=25.460.7220=24.76220=0.1126A=112.6mAI_m = \frac{V_m - V_D}{R_L} = \frac{25.46 - 0.7}{220} = \frac{24.76}{220} = 0.1126\,\text{A} = 112.6\,\text{mA}

For a full-wave rectifier:

Idc=2Imπ=2×0.1126π=0.07165A=71.65mAI_{dc} = \frac{2 I_m}{\pi} = \frac{2\times 0.1126}{\pi} = 0.07165\,\text{A} = 71.65\,\text{mA} Vdc=IdcRL=0.07165×220=15.76VV_{dc} = I_{dc}\,R_L = 0.07165\times 220 = \mathbf{15.76\,V}

(c) RMS current, ripple, efficiency, PIV

RMS load current (full-wave):

Irms=Im2=0.11262=0.0796A=79.6mAI_{rms} = \frac{I_m}{\sqrt{2}} = \frac{0.1126}{\sqrt 2} = 0.0796\,\text{A} = 79.6\,\text{mA}

Ripple factor:

r=(IrmsIdc)21=(0.07960.07165)21=1.23381=0.2338=0.483r = \sqrt{\left(\frac{I_{rms}}{I_{dc}}\right)^2 - 1} = \sqrt{\left(\frac{0.0796}{0.07165}\right)^2 - 1} = \sqrt{1.2338 - 1} = \sqrt{0.2338} = \mathbf{0.483}

(This matches the standard full-wave value r0.48r \approx 0.48.)

Rectifier efficiency:

η=PdcPac=Idc2RLIrms2RL=(0.071650.0796)2=(0.9001)2=0.8102=81.0%\eta = \frac{P_{dc}}{P_{ac}} = \frac{I_{dc}^2 R_L}{I_{rms}^2 R_L} = \left(\frac{0.07165}{0.0796}\right)^2 = (0.9001)^2 = 0.8102 = \mathbf{81.0\%}

Peak Inverse Voltage: when one diode conducts, the non-conducting diode sees both halves of the secondary:

PIV=2Vm=2×25.46=50.9V\text{PIV} = 2V_m = 2\times 25.46 = \mathbf{50.9\,V}
semiconductor-dioderectifierripple-factor
2long10 marks

An NPN silicon transistor is used in a voltage-divider bias circuit with the following values: VCC=15VV_{CC} = 15\,\text{V}, R1=39kΩR_1 = 39\,\text{k}\Omega, R2=8.2kΩR_2 = 8.2\,\text{k}\Omega, RC=2.2kΩR_C = 2.2\,\text{k}\Omega, RE=1kΩR_E = 1\,\text{k}\Omega, β=120\beta = 120 and VBE=0.7VV_{BE} = 0.7\,\text{V}.

(a) Explain why voltage-divider bias gives good QQ-point stability against variations in β\beta.

(b) Using the exact (Thevenin) analysis, find the base current IBI_B, collector current ICI_C and emitter current IEI_E.

(c) Find the collector-emitter voltage VCEV_{CE} and verify that the transistor operates in the active region.

(a) Stability

The divider R1R_1R2R_2 fixes the base voltage VBV_B nearly independent of IBI_B. With an emitter resistor RER_E, the emitter voltage follows VBV_B, so IE(VBVBE)/REI_E \approx (V_B - V_{BE})/R_E is set by resistors, not by β\beta. If β\beta rises, ICI_C tends to rise, VEV_E rises, VBEV_{BE} falls, which throttles back IBI_B — negative feedback that holds the QQ-point fixed.

(b) Thevenin analysis

Thevenin voltage and resistance at the base:

VTH=VCCR2R1+R2=15×8.247.2=2.606VV_{TH} = V_{CC}\frac{R_2}{R_1+R_2} = 15\times\frac{8.2}{47.2} = 2.606\,\text{V} RTH=R1R2=39×8.247.2=6.776kΩR_{TH} = R_1\parallel R_2 = \frac{39\times 8.2}{47.2} = 6.776\,\text{k}\Omega

Base loop (KVL):

VTH=IBRTH+VBE+IERE,IE=(β+1)IBV_{TH} = I_B R_{TH} + V_{BE} + I_E R_E,\quad I_E = (\beta+1)I_B IB=VTHVBERTH+(β+1)RE=2.6060.76.776+121×1=1.906127.776kΩI_B = \frac{V_{TH} - V_{BE}}{R_{TH} + (\beta+1)R_E} = \frac{2.606 - 0.7}{6.776 + 121\times 1} = \frac{1.906}{127.776\,\text{k}\Omega} IB=14.92μAI_B = 14.92\,\mu\text{A} IC=βIB=120×14.92μA=1.790mAI_C = \beta I_B = 120\times 14.92\,\mu\text{A} = \mathbf{1.790\,mA} IE=(β+1)IB=121×14.92μA=1.805mAI_E = (\beta+1)I_B = 121\times 14.92\,\mu\text{A} = \mathbf{1.805\,mA}

(c) VCEV_{CE} and region check

VCE=VCCICRCIERE=15(1.790×2.2)(1.805×1)V_{CE} = V_{CC} - I_C R_C - I_E R_E = 15 - (1.790\times 2.2) - (1.805\times 1) VCE=153.9381.805=9.26VV_{CE} = 15 - 3.938 - 1.805 = \mathbf{9.26\,V}

Since VCE=9.26VV_{CE} = 9.26\,\text{V} is well above VCE(sat)0.2VV_{CE(sat)}\approx 0.2\,\text{V} and below VCCV_{CC}, and the base-emitter junction is forward biased, the transistor operates in the active region.

bjtdc-biasingvoltage-divider-bias
3long8 marks

Consider an ideal operational amplifier.

(a) State the ideal op-amp assumptions and derive the closed-loop gain of an inverting amplifier with input resistor R1R_1 and feedback resistor RfR_f.

(b) A summing amplifier has inputs V1=0.5VV_1 = 0.5\,\text{V} through Ra=10kΩR_a = 10\,\text{k}\Omega, V2=1.2VV_2 = -1.2\,\text{V} through Rb=20kΩR_b = 20\,\text{k}\Omega, and V3=0.8VV_3 = 0.8\,\text{V} through Rc=5kΩR_c = 5\,\text{k}\Omega, all summing into a common feedback resistor Rf=40kΩR_f = 40\,\text{k}\Omega. Compute the output voltage VoV_o.

(a) Ideal assumptions and inverting gain

Ideal op-amp: (i) infinite open-loop gain, (ii) infinite input impedance (no current into inputs), (iii) zero output impedance, (iv) infinite bandwidth. With negative feedback the two inputs are at the same potential (virtual short); the non-inverting input is grounded, so the inverting node is a virtual ground (V=0V_- = 0).

KCL at the inverting node (no current into the op-amp):

Vin0R1=0VoRf\frac{V_{in}-0}{R_1} = \frac{0 - V_o}{R_f} Av=VoVin=RfR1\boxed{A_v = \frac{V_o}{V_{in}} = -\frac{R_f}{R_1}}

(b) Summing amplifier output

For a summing inverting amplifier:

Vo=Rf(V1Ra+V2Rb+V3Rc)V_o = -R_f\left(\frac{V_1}{R_a}+\frac{V_2}{R_b}+\frac{V_3}{R_c}\right)

Compute each input current term:

V1Ra=0.510k=0.05mA\frac{V_1}{R_a} = \frac{0.5}{10\,\text{k}} = 0.05\,\text{mA} V2Rb=1.220k=0.06mA\frac{V_2}{R_b} = \frac{-1.2}{20\,\text{k}} = -0.06\,\text{mA} V3Rc=0.85k=0.16mA\frac{V_3}{R_c} = \frac{0.8}{5\,\text{k}} = 0.16\,\text{mA}

Sum =0.050.06+0.16=0.15mA= 0.05 - 0.06 + 0.16 = 0.15\,\text{mA}

Vo=40kΩ×0.15mA=6.0VV_o = -40\,\text{k}\Omega \times 0.15\,\text{mA} = \mathbf{-6.0\,V}
op-ampinverting-amplifiersumming-amplifier
4long8 marks

A combinational function of four variables is given by

F(A,B,C,D)=m(0,1,2,5,8,9,10,13).F(A,B,C,D) = \sum m(0,1,2,5,8,9,10,13).

(a) Plot the function on a Karnaugh map and obtain the minimal sum-of-products (SOP) expression.

(b) Implement the minimised expression using only NAND gates and state how many two-input NAND gates are required.

(a) K-map and minimisation

Minterms present: 0,1,2,5,8,9,10,13. Map (rows ABAB, columns CDCD in Gray order 00,01,11,10):

AB\CD00011110
001101
010100
110100
101101

Grouping:

  • Column CD=01 (m1,5,13,9): all four cells = 1 → term CˉD\bar C D.
  • Cells where CD=00 and CD=10 with B=0 i.e. m0,m2,m8,m10 (corners of the B=0 region, D=0D=0): these four 1's share BˉDˉ\bar B\,\bar D → term BˉDˉ\bar B\,\bar D.

Check coverage: CˉD\bar C D covers 1,5,9,13. BˉDˉ\bar B \bar D covers 0,2,8,10. Together = {0,1,2,5,8,9,10,13} = all minterms.

F=BˉDˉ+CˉD\boxed{F = \bar B\,\bar D + \bar C D}

(b) NAND-only implementation

Convert SOP to NAND-NAND using De Morgan:

F=(BˉDˉ)(CˉD)F = \overline{\overline{(\bar B\,\bar D)}\cdot\overline{(\bar C D)}}

Gates needed (two-input NAND):

  • Inverters for Bˉ,Cˉ,Dˉ\bar B,\bar C,\bar D: 3 NAND gates (each input tied together).
  • AND-term BˉDˉ\bar B\,\bar D realised as NAND: 1 gate.
  • AND-term CˉD\bar C D realised as NAND: 1 gate.
  • Final output NAND combining the two product terms: 1 gate.

Total =3+1+1+1=6= 3 + 1 + 1 + 1 = \mathbf{6} two-input NAND gates.

B --NAND(self)--> B'
D --NAND(self)--> D'
C --NAND(self)--> C'
B',D' --NAND--> g1
C', D --NAND--> g2
g1, g2 --NAND--> F
digital-logicboolean-algebrak-map
5long8 marks

(a) With a neat diagram, explain the working of a Wheatstone bridge and derive the balance condition.

(b) A strain gauge with nominal resistance R=120ΩR = 120\,\Omega and gauge factor GF=2.0GF = 2.0 forms one arm of an initially balanced bridge. When the structure is loaded the gauge experiences a strain of 750με750\,\mu\varepsilon (microstrain). Calculate the change in gauge resistance ΔR\Delta R. If the bridge excitation is 5V5\,\text{V}, estimate the output (unbalance) voltage for this quarter-bridge configuration.

(a) Wheatstone bridge and balance condition

        A
       / \
     R1   R2
     /     \
    B--(G)--C      (G = galvanometer/detector)
     \     /
     R3   R4
       \ /
        D
   ( supply V across A-D )

The bridge is two voltage dividers (R1,R3) and (R2,R4) fed by source VV. The detector reads the difference between nodes B and C. At balance the detector current is zero, so B and C are at equal potential:

R3R1+R3=R4R2+R4    R1R4=R2R3\frac{R_3}{R_1+R_3} = \frac{R_4}{R_2+R_4} \;\Rightarrow\; \boxed{R_1 R_4 = R_2 R_3}

(b) Strain gauge calculation

Gauge factor relates fractional resistance change to strain:

GF=ΔR/Rε    ΔR=GFεRGF = \frac{\Delta R/R}{\varepsilon}\;\Rightarrow\; \Delta R = GF\cdot\varepsilon\cdot R ΔR=2.0×(750×106)×120=2.0×0.00075×120=0.18Ω\Delta R = 2.0 \times (750\times 10^{-6}) \times 120 = 2.0\times 0.00075\times 120 = \mathbf{0.18\,\Omega}

Quarter-bridge output (all arms initially equal to RR, only one arm changes by ΔR\Delta R):

VoV4ΔRR=54×0.18120V_o \approx \frac{V}{4}\cdot\frac{\Delta R}{R} = \frac{5}{4}\times\frac{0.18}{120} Vo=1.25×0.0015=0.001875V=1.875mVV_o = 1.25 \times 0.0015 = 0.001875\,\text{V} = \mathbf{1.875\,mV}

The small unbalance voltage (a few mV) is why strain-gauge bridges feed an instrumentation amplifier.

instrumentationwheatstone-bridgetransducer
B

Section B: Short Answer Questions

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6 questions
6short6 marks

A Zener diode rated VZ=6.2VV_Z = 6.2\,\text{V} is used as a shunt regulator. The unregulated input is Vin=12VV_{in} = 12\,\text{V}, the series resistor is Rs=330ΩR_s = 330\,\Omega, and the load resistance is RL=1kΩR_L = 1\,\text{k}\Omega. The minimum holding current for regulation is IZ(min)=5mAI_{Z(min)} = 5\,\text{mA}.

(a) Find the load current, the series resistor current, and the Zener current.

(b) State whether regulation is maintained.

(a) Currents

With the Zener regulating, the load sees VZ=6.2VV_Z = 6.2\,\text{V}.

Load current:

IL=VZRL=6.21000=6.2mAI_L = \frac{V_Z}{R_L} = \frac{6.2}{1000} = 6.2\,\text{mA}

Series-resistor current:

Is=VinVZRs=126.2330=5.8330=17.58mAI_s = \frac{V_{in}-V_Z}{R_s} = \frac{12-6.2}{330} = \frac{5.8}{330} = 17.58\,\text{mA}

Zener current (KCL: Is=IZ+ILI_s = I_Z + I_L):

IZ=IsIL=17.586.2=11.38mAI_Z = I_s - I_L = 17.58 - 6.2 = \mathbf{11.38\,mA}

(b) Regulation check

Since IZ=11.38mA>IZ(min)=5mAI_Z = 11.38\,\text{mA} > I_{Z(min)} = 5\,\text{mA}, the Zener stays in breakdown and regulation is maintained; the output is held at 6.2V6.2\,\text{V}.

zener-diodevoltage-regulatorload-regulation
7short6 marks

A common-emitter amplifier has a quiescent emitter current IE=1.5mAI_E = 1.5\,\text{mA} at room temperature (VT=26mVV_T = 26\,\text{mV}). The collector load is RC=3.3kΩR_C = 3.3\,\text{k}\Omega (assume ror_o is large and the emitter is fully bypassed). Take β=150\beta = 150.

(a) Find the dynamic emitter resistance rer_e and the input resistance looking into the base.

(b) Find the small-signal voltage gain AvA_v.

(a) rer_e and base input resistance

Dynamic emitter resistance:

re=VTIE=26mV1.5mA=17.33Ωr_e = \frac{V_T}{I_E} = \frac{26\,\text{mV}}{1.5\,\text{mA}} = 17.33\,\Omega

Input resistance looking into the base (emitter bypassed):

rin(base)=βre=150×17.33=2600Ω=2.6kΩr_{in(base)} = \beta r_e = 150\times 17.33 = 2600\,\Omega = \mathbf{2.6\,k\Omega}

(b) Voltage gain

For a fully bypassed CE stage:

Av=RCre=330017.33=190.4A_v = -\frac{R_C}{r_e} = -\frac{3300}{17.33} = \mathbf{-190.4}

The negative sign indicates the 180180^\circ phase inversion characteristic of the common-emitter configuration; magnitude 190\approx 190.

bjt-amplifiersmall-signalce-amplifier
8short6 marks

(a) A non-inverting amplifier uses R1=2kΩR_1 = 2\,\text{k}\Omega (from inverting input to ground) and Rf=18kΩR_f = 18\,\text{k}\Omega (feedback). Find its closed-loop gain and the output for an input of 0.4V0.4\,\text{V}.

(b) An ideal op-amp integrator has R=100kΩR = 100\,\text{k}\Omega and C=0.1μFC = 0.1\,\mu\text{F}. A constant 2V-2\,\text{V} step is applied at t=0t=0 with the capacitor initially uncharged. Find the output voltage at t=5mst = 5\,\text{ms}.

(a) Non-inverting amplifier

Av=1+RfR1=1+182=1+9=10A_v = 1 + \frac{R_f}{R_1} = 1 + \frac{18}{2} = 1 + 9 = 10 Vo=AvVin=10×0.4=4.0VV_o = A_v\, V_{in} = 10\times 0.4 = \mathbf{4.0\,V}

(b) Integrator

The ideal inverting integrator obeys:

Vo(t)=1RC0tVindt+Vo(0)V_o(t) = -\frac{1}{RC}\int_0^t V_{in}\,dt + V_o(0)

Time constant:

RC=100×103×0.1×106=0.01s=10msRC = 100\times 10^3 \times 0.1\times 10^{-6} = 0.01\,\text{s} = 10\,\text{ms}

For a constant input Vin=2VV_{in} = -2\,\text{V} with Vo(0)=0V_o(0)=0:

Vo(t)=1RCVint=10.01×(2)×t=200tV_o(t) = -\frac{1}{RC}\,V_{in}\,t = -\frac{1}{0.01}\times(-2)\times t = 200\,t

At t=5ms=0.005st = 5\,\text{ms} = 0.005\,\text{s}:

Vo=200×0.005=+1.0VV_o = 200\times 0.005 = \mathbf{+1.0\,V}

The output ramps up linearly because the input is a negative constant (inverting integration).

op-ampnon-inverting-amplifierintegrator
9short6 marks

(a) Convert the decimal number (181)10(181)_{10} to binary, octal and hexadecimal.

(b) Perform the subtraction (45)10(28)10(45)_{10} - (28)_{10} using 8-bit two's-complement arithmetic and verify the result.

(a) Base conversions of 181181

Binary (repeated division by 2): 181=101101012181 = 10110101_2. Check: 128+32+16+4+1=181128+32+16+4+1 = 181. ✓

Octal (group bits in 3s from right: 1011010110\,110\,101010110101010\,110\,101): =2658= 265_8. Check: 2×64+6×8+5=128+48+5=1812\times 64 + 6\times 8 + 5 = 128+48+5 = 181. ✓

Hex (group bits in 4s: 101101011011\,0101): =B516= \text{B5}_{16}. Check: 11×16+5=176+5=18111\times 16 + 5 = 176+5 = 181. ✓

(181)10=(10110101)2=(265)8=(B5)16\boxed{(181)_{10} = (10110101)_2 = (265)_8 = (\text{B5})_{16}}

(b) Two's-complement subtraction 452845 - 28

+45=001011012+45 = 00101101_2

+28=000111002+28 = 00011100_2 → one's complement 1110001111100011 → two's complement (28)=111001002(-28) = 11100100_2.

Add:

  00101101   (+45)
+ 11100100   (-28)
-----------
 100010001

Discard the carry out of bit 7 (the 9th bit): result =000100012=16+1=17= 00010001_2 = 16+1 = 17.

4528=1745 - 28 = \mathbf{17}\quad\checkmark

The carry-out is discarded and there is no overflow (operands have opposite signs), so the answer is correct and positive.

number-systemsbinary-arithmeticdigital-codes
10short6 marks

An n-channel JFET has IDSS=10mAI_{DSS} = 10\,\text{mA} and pinch-off voltage VP=4VV_P = -4\,\text{V}.

(a) Using Shockley's equation, find the drain current IDI_D when VGS=1.5VV_{GS} = -1.5\,\text{V}.

(b) Find the transconductance gmg_m at this operating point and the maximum transconductance gm0g_{m0}.

(a) Drain current (Shockley's equation)

ID=IDSS(1VGSVP)2=10mA(11.54)2I_D = I_{DSS}\left(1 - \frac{V_{GS}}{V_P}\right)^2 = 10\,\text{mA}\left(1 - \frac{-1.5}{-4}\right)^2 =10(10.375)2=10×(0.625)2=10×0.3906=3.91mA= 10\left(1 - 0.375\right)^2 = 10\times(0.625)^2 = 10\times 0.3906 = \mathbf{3.91\,mA}

(b) Transconductance

Maximum transconductance:

gm0=2IDSSVP=2×10mA4V=5mA/V=5mSg_{m0} = \frac{2 I_{DSS}}{|V_P|} = \frac{2\times 10\,\text{mA}}{4\,\text{V}} = 5\,\text{mA/V} = \mathbf{5\,mS}

Transconductance at the operating point:

gm=gm0(1VGSVP)=5mS×(10.375)=5×0.625=3.125mSg_m = g_{m0}\left(1 - \frac{V_{GS}}{V_P}\right) = 5\,\text{mS}\times(1 - 0.375) = 5\times 0.625 = \mathbf{3.125\,mS}
jfettransistor-characteristicstransconductance
11short6 marks

(a) Briefly describe the function of the vertical and horizontal (time-base) sections of a cathode-ray oscilloscope (CRO).

(b) A sinusoidal signal displayed on a CRO occupies 66 vertical divisions peak-to-peak and one full cycle spans 44 horizontal divisions. The vertical sensitivity is set to 0.5V/div0.5\,\text{V/div} and the time base to 0.2ms/div0.2\,\text{ms/div}. Determine the peak-to-peak voltage, the RMS voltage, and the signal frequency.

(a) CRO sections

  • Vertical section: amplifies/attenuates the input signal and applies it to the vertical (Y) deflection plates, controlling the height of the trace; its calibrated sensitivity (V/div) lets you read voltage amplitude.
  • Horizontal / time-base section: generates an internal sawtooth (ramp) sweep applied to the horizontal (X) plates so the spot moves left-to-right at a known rate (time/div), displaying the signal as voltage versus time. A trigger circuit synchronises the sweep so the waveform appears stationary.

(b) Measurements

Peak-to-peak voltage:

Vpp=(divisions)×(V/div)=6×0.5=3.0VV_{pp} = (\text{divisions})\times(\text{V/div}) = 6\times 0.5 = \mathbf{3.0\,V}

Peak voltage Vm=Vpp/2=1.5VV_m = V_{pp}/2 = 1.5\,\text{V}. RMS value of a sine:

Vrms=Vm2=1.51.4142=1.06VV_{rms} = \frac{V_m}{\sqrt 2} = \frac{1.5}{1.4142} = \mathbf{1.06\,V}

Period and frequency:

T=(divisions/cycle)×(time/div)=4×0.2ms=0.8msT = (\text{divisions/cycle})\times(\text{time/div}) = 4\times 0.2\,\text{ms} = 0.8\,\text{ms} f=1T=10.8×103=1250Hz=1.25kHzf = \frac{1}{T} = \frac{1}{0.8\times 10^{-3}} = 1250\,\text{Hz} = \mathbf{1.25\,kHz}
instrumentationoscilloscopemeasurement

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