BE Computer Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) Question Paper 2078
This is the official BE Computer Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) question paper for 2078, as set in the regular annual examination. It carries 80 full marks and a time allowance of 180 minutes, across 12 questions. On Kekkei you can attempt this Basic Electronics Engineering (IOE, EX 451) past paper online with a timer, get instant AI feedback and step-by-step solutions, and track the topics where you lose marks — completely free. Whether you are revising for your BE Computer Engineering (IOE, TU) Basic Electronics Engineering (IOE, EX 451) exam or solving previous years' question papers, this 2078 paper is a great way to practise under real exam conditions.
Section A: Long Answer Questions
Attempt all / any as specified.
(a) Explain the input and output characteristics of an n-p-n transistor connected in common-emitter (CE) configuration, clearly indicating the active, cut-off and saturation regions on the output characteristics. [6]
(b) For the voltage-divider biased CE amplifier shown below, , , , , and . Determine the operating point ( and ) and comment on the stability of the bias. [6]
(a) Define the ideal characteristics of an operational amplifier and explain the significance of the virtual ground concept in an inverting configuration. [5]
(b) Design an op-amp circuit that produces the output from three input voltages , and . Choose suitable resistor values and draw the complete circuit, stating any assumptions. [7]
(a) With a neat circuit diagram and relevant waveforms, explain the operation of a full-wave bridge rectifier. Derive expressions for its average (DC) output voltage and ripple factor. [7]
(b) A full-wave bridge rectifier fed from a transformer with peak secondary voltage of 30 V uses a shunt capacitor filter of and feeds a load of at 50 Hz mains frequency. Estimate the DC output voltage and the peak-to-peak ripple voltage. [5]
(a) Explain the construction and operation of an n-channel enhancement-type MOSFET. Sketch its drain and transfer characteristics and define the threshold voltage. [7]
(b) Compare a JFET with a BJT with respect to input impedance, control mechanism, noise performance and the meaning of the term 'unipolar device'. [5]
Section B: Short Answer Questions
Attempt all / any as specified.
Sketch and explain a positive clipper and a positive clamper circuit using a diode. Draw the output waveform for a sinusoidal input of in each case.
A Zener diode having is used as a voltage regulator with a series resistance of from a 12 V supply. If the load draws 15 mA, calculate the current through the Zener diode and the power dissipated in it. State the condition for the regulator to maintain regulation.
(a) Convert to its decimal and binary equivalents. [3]
(b) Perform the subtraction using 2's complement arithmetic and verify your result in decimal. [3]
(a) State and prove De Morgan's theorems. [3]
(b) Simplify the Boolean expression and implement the simplified expression using only NAND gates. [3]
State the Barkhausen criterion for sustained oscillations. With a neat circuit diagram, explain the working of an RC phase-shift oscillator and write the expression for its frequency of oscillation.
For an op-amp integrator, derive the relationship between the output and input voltages. Explain why a high-value resistor is connected in parallel with the feedback capacitor in a practical integrator.
Explain the formation of the depletion region in an unbiased p-n junction. Describe how the width of the depletion region and the junction current change under forward bias and reverse bias.
Define the parameters and of a transistor and derive the relationship between them. If a transistor has , calculate and the value of the leakage current effect described by in terms of .